One-source PVD of n-CuIn5Se8 photoabsorber films for hybrid solar cells
Identifieur interne : 000807 ( Main/Repository ); précédent : 000806; suivant : 000808One-source PVD of n-CuIn5Se8 photoabsorber films for hybrid solar cells
Auteurs : RBID : Pascal:13-0254853Descripteurs français
- Pascal (Inist)
- Dépôt physique phase vapeur, Cellule solaire, Addition étain, Polycristal, Procédé dépôt, Recuit thermique, Procédé fabrication, Polymère, Traitement thermique, Structure chalcopyrite, Photosensibilité, Lumière blanche, Eclairement, Spectrométrie impédance électrochimique, Densité porteur charge, Conductivité type n, Semiconducteur type n, Verre, Oxyde d'indium, Argon, ITO.
- Wicri :
English descriptors
- KwdEn :
- Argon, Chalcopyrite structure, Charge carrier density, Deposition process, Electrochemical impedance spectroscopy, Glass, Heat treatment, Illumination, Indium oxide, Manufacturing process, N type conductivity, Photosensitivity, Physical vapor deposition, Polycrystal, Polymer, Solar cell, Thermal annealing, Tin addition, White light, n type semiconductor.
Abstract
Highly photosensitive CuIn5Se8 photoabsorber layers of n-type were deposited onto glass/ITO substrates from the bulk CuIn5Se8 source polycrystal by using the one-source physical vapour deposition (PVD) technique with following thermal annealing. The parameters of deposition process and thermal annealing were selected with the purpose to prepare photoabsorber layers for the hybrid photovoltaic structures based on inorganic and conductive polymer functional layers. As-deposited structures were annealed at the temperature range from 450 to 500 °C in vacuum. Also, thermal annealing in argon and in vacuum in sequence was applied for the part of obtained structures according to conception of the sequential annealing. Obtained results show the chalcopyrite structure of prepared photoabsorber films and dominating presence of the CuIn5Se8 phase in the layers annealed in vacuum. It was found, that the CuIn5Se8 layers deposited at the temperature of substrate of 200 °C and annealed at 500 °C for 2 h in vacuum show maximal photosensitivity under white light illumination with an intensity of 100 mW/cm2. On the basis of the electrochemical impedance spectroscopy the order of charge carriers concentration in prepared photoabsorber layers was evaluated and n-type of conductivity confirmed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">One-source PVD of n-CuIn<sub>5</sub>Se<sub>8 </sub>photoabsorber films for hybrid solar cells</title><author><name sortKey="Bereznev, S" uniqKey="Bereznev S">S. Bereznev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Adhikari, N" uniqKey="Adhikari N">N. Adhikari</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Kois, J" uniqKey="Kois J">J. Kois</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Raadik, T" uniqKey="Raadik T">T. Raadik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Traksmaa, R" uniqKey="Traksmaa R">R. Traksmaa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>5 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Volobujeva, O" uniqKey="Volobujeva O">O. Volobujeva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Kouhiisfahani, E" uniqKey="Kouhiisfahani E">E. Kouhiisfahani</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author><author><name sortKey="Opik, A" uniqKey="Opik A">A. Öpik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Estonie</country><wicri:noRegion>19086 Tallinn</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0254853</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0254853 INIST</idno><idno type="RBID">Pascal:13-0254853</idno><idno type="wicri:Area/Main/Corpus">000973</idno><idno type="wicri:Area/Main/Repository">000807</idno></publicationStmt><seriesStmt><idno type="ISSN">0038-092X</idno><title level="j" type="abbreviated">Sol. energy</title><title level="j" type="main">Solar energy</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Argon</term><term>Chalcopyrite structure</term><term>Charge carrier density</term><term>Deposition process</term><term>Electrochemical impedance spectroscopy</term><term>Glass</term><term>Heat treatment</term><term>Illumination</term><term>Indium oxide</term><term>Manufacturing process</term><term>N type conductivity</term><term>Photosensitivity</term><term>Physical vapor deposition</term><term>Polycrystal</term><term>Polymer</term><term>Solar cell</term><term>Thermal annealing</term><term>Tin addition</term><term>White light</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt physique phase vapeur</term><term>Cellule solaire</term><term>Addition étain</term><term>Polycristal</term><term>Procédé dépôt</term><term>Recuit thermique</term><term>Procédé fabrication</term><term>Polymère</term><term>Traitement thermique</term><term>Structure chalcopyrite</term><term>Photosensibilité</term><term>Lumière blanche</term><term>Eclairement</term><term>Spectrométrie impédance électrochimique</term><term>Densité porteur charge</term><term>Conductivité type n</term><term>Semiconducteur type n</term><term>Verre</term><term>Oxyde d'indium</term><term>Argon</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term><term>Verre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Highly photosensitive CuIn<sub>5</sub>Se<sub>8</sub> photoabsorber layers of n-type were deposited onto glass/ITO substrates from the bulk CuIn<sub>5</sub>Se<sub>8</sub> source polycrystal by using the one-source physical vapour deposition (PVD) technique with following thermal annealing. The parameters of deposition process and thermal annealing were selected with the purpose to prepare photoabsorber layers for the hybrid photovoltaic structures based on inorganic and conductive polymer functional layers. As-deposited structures were annealed at the temperature range from 450 to 500 °C in vacuum. Also, thermal annealing in argon and in vacuum in sequence was applied for the part of obtained structures according to conception of the sequential annealing. Obtained results show the chalcopyrite structure of prepared photoabsorber films and dominating presence of the CuIn<sub>5</sub>Se<sub>8</sub> phase in the layers annealed in vacuum. It was found, that the CuIn<sub>5</sub>Se<sub>8</sub> layers deposited at the temperature of substrate of 200 °C and annealed at 500 °C for 2 h in vacuum show maximal photosensitivity under white light illumination with an intensity of 100 mW/cm<sup>2</sup>. On the basis of the electrochemical impedance spectroscopy the order of charge carriers concentration in prepared photoabsorber layers was evaluated and n-type of conductivity confirmed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-092X</s0></fA01><fA02 i1="01"><s0>SRENA4</s0></fA02><fA03 i2="1"><s0>Sol. energy</s0></fA03><fA05><s2>94</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>One-source PVD of n-CuIn<sub>5</sub>Se<sub>8 </sub>photoabsorber films for hybrid solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>BEREZNEV (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>ADHIKARI (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOIS (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>RAADIK (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>TRAKSMAA (R.)</s1></fA11><fA11 i1="06" i2="1"><s1>VOLOBUJEVA (O.)</s1></fA11><fA11 i1="07" i2="1"><s1>KOUHIISFAHANI (E.)</s1></fA11><fA11 i1="08" i2="1"><s1>ÖPIK (A.)</s1></fA11><fA14 i1="01"><s1>Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Tallinn University of Technology, Materials Research Center, Ehitajate tee 5</s1><s2>19086 Tallinn</s2><s3>EST</s3><sZ>5 aut.</sZ></fA14><fA20><s1>202-208</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8338A</s2><s5>354000503663930170</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>1/4 p.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0254853</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Highly photosensitive CuIn<sub>5</sub>Se<sub>8</sub> photoabsorber layers of n-type were deposited onto glass/ITO substrates from the bulk CuIn<sub>5</sub>Se<sub>8</sub> source polycrystal by using the one-source physical vapour deposition (PVD) technique with following thermal annealing. The parameters of deposition process and thermal annealing were selected with the purpose to prepare photoabsorber layers for the hybrid photovoltaic structures based on inorganic and conductive polymer functional layers. As-deposited structures were annealed at the temperature range from 450 to 500 °C in vacuum. Also, thermal annealing in argon and in vacuum in sequence was applied for the part of obtained structures according to conception of the sequential annealing. Obtained results show the chalcopyrite structure of prepared photoabsorber films and dominating presence of the CuIn<sub>5</sub>Se<sub>8</sub> phase in the layers annealed in vacuum. It was found, that the CuIn<sub>5</sub>Se<sub>8</sub> layers deposited at the temperature of substrate of 200 °C and annealed at 500 °C for 2 h in vacuum show maximal photosensitivity under white light illumination with an intensity of 100 mW/cm<sup>2</sup>. On the basis of the electrochemical impedance spectroscopy the order of charge carriers concentration in prepared photoabsorber layers was evaluated and n-type of conductivity confirmed.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dépôt physique phase vapeur</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Physical vapor deposition</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Deposición física fase vapor</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Solar cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula solar</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Addition étain</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Tin addition</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Adición estaño</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Polycristal</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Polycrystal</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Policristal</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Procédé dépôt</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Deposition process</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Procedimiento revestimiento</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Recuit thermique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thermal annealing</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Recocido térmico</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Procédé fabrication</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Manufacturing process</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Procedimiento fabricación</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Polymère</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Polymer</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Polímero</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Traitement thermique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Heat treatment</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Tratamiento térmico</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Photosensibilité</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Photosensitivity</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Fotosensibilidad</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Lumière blanche</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>White light</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Luz blanca</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Eclairement</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Illumination</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Alumbrado</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Spectrométrie impédance électrochimique</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electrochemical impedance spectroscopy</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Densité porteur charge</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Charge carrier density</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Concentración portador carga</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Conductivité type n</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>N type conductivity</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Conductividad tipo n</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Semiconducteur type n</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>n type semiconductor</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Semiconductor tipo n</s0><s5>22</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Verre</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Glass</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Vidrio</s0><s5>23</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Indium oxide</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Indio óxido</s0><s5>24</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Argon</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Argon</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Argón</s0><s2>NC</s2><s5>25</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>ITO</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>245</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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